| 申请日期 | 2025-07-07 | 申请号 | US12961088 |
| 公开（公告）号 | US8884397B2 | 公开（公告）日 | 2014-11-11 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Katsuhisa Aratani; Akihiro Maesaka; Akira Kouchiyama; Tomohito Tsushima | ||
| 简介 | A memory device 10 having an arrangement in which a memory thin film is sandwiched between first and second electrodes, the memory thin film contains at least rare earth elements, the memory thin film 4 or a layer in contact with the memory thin film contains any one of elements selected from Cu, Ag, Zn and the memory thin film or the layer in contact with the memory thin film contains any one of elements selected from Te, S, Se. | ||
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