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Perovskite manganese oxide thin film and manufacturing method therefor 发明授权

2023-08-07 3290 896K 0

专利信息

申请日期 2025-07-28 申请号 US13817127
公开(公告)号 US8878322B2 公开(公告)日 2014-11-04
公开国别 US 申请人省市代码 全国
申请人 Yasushi Ogimoto
简介 A perovskite manganese oxide thin film formed on a substrate that allows a first order phase transition and has A-site ordering. The thin film contains Ba and a rare earth element in the A sites of a perovskite crystal lattice and has an (m10) orientation for which m=2n, and 9≧n≧1. A method for manufacturing the film includes forming in a controlled atmosphere using laser ablation an atomic layer or thin film that assumes a pyramidal structure having oxygen-deficient sites in a plane containing the rare earth element and oxygen; and filling the oxygen-deficient sites with oxygen. The controlled atmosphere has an oxygen partial pressure controlled to a thermodynamically required value for creating oxygen deficiencies and contains a gas other than oxygen, and has a total pressure that is controlled to a value at which the A sites have a fixed compositional ratio.


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