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AlN cap grown on GaN/REO/silicon substrate structure 发明授权

2023-12-20 1970 411K 0

专利信息

申请日期 2025-07-18 申请号 US13772169
公开(公告)号 US8872308B2 公开(公告)日 2014-10-28
公开国别 US 申请人省市代码 全国
申请人 Erdem Arkun; Michael Lebby; Andrew Clark; Rytis Dargis
简介 III-N material grown on a silicon substrate includes a single crystal rare earth oxide layer positioned on a silicon substrate. The rare earth oxide is substantially crystal lattice matched to the surface of the silicon substrate. A first layer of III-N material is positioned on the surface of the rare earth oxide layer. An inter-layer of aluminum nitride (AlN) is positioned on the surface of the first layer of III-N material and an additional layer of III-N material is positioned on the surface of the inter-layer of aluminum nitride. The inter-layer of aluminum nitride and the additional layer of III-N material are repeated n-times to reduce or engineer strain in a final III-N layer. A cap layer of AlN is grown on the final III-N layer and a III-N layer of material with one of an LED structure and an HEMT structure is grown on the AlN cap layer.


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