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MASK BLANK, MASK FOR TRANSFER, AND MANUFACTURING METHOD OF THE SAME 发明申请

2023-11-16 4080 75K 0

专利信息

申请日期 2026-04-27 申请号 JP2014086232
公开(公告)号 JP2014194547A 公开(公告)日 2014-10-09
公开国别 JP 申请人省市代码 全国
申请人 HOYA CORP
简介 PROBLEM TO BE SOLVED : To provide a mask blank, a manufacturing method of the mask blank, or the like, in which in-plane uniformity of transmittance falls within a predetermined allowable range after heat treatment and forced cooling treatment. SOLUTION : There is provided a mask blank in which a translucent substrate 1 includes a thin film 2 for forming a transfer pattern is on its main surface. The thin film 2 is made of a material which consists of silicon and nitrogen or a material in which one or more elements selected from a semimetal element, a non-metal element and rare gas is contained in the material which consists of silicon and nitrogen, the thin film 2 has, on its surface layer, an oxide layer 22 which has larger oxygen content than a thin film 21 in a region other than the surface layer, the thin film 2 is formed such that thickness of the central part is thicker than thickness of a periphery part on a main surface side, and the oxide layer 22 is formed such that thickness of the central part is thicker than thickness of a periphery part on the main surface side. COPYRIGHT : (C)2015, JPO&INPIT


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