| 简介 |
PROBLEM TO BE SOLVED : To provide a method for etching a film containing cobalt and palladium in manufacturing an electronic device.
SOLUTION : A method for etching a film containing cobalt and palladium comprises : the step "a" for etching a film containing cobalt and palladium, which is an object to be processed, by an ion-sputtering etching method; the step "b" for exposing the object to be processed to plasma of a first gas containing elemental halogen; the step "c" for exposing the object to be processed to plasma of a second gas containing carbon; and the step "d" for exposing the object to be processed to plasma of a third gas containing inert gas. In the steps "a", "b", and "c", the temperature of a setting table to put thereon the object to be processed is set to a first temperature of 10°C or below. In the step "d", the temperature of the setting table to put thereon the object to be processed is set to a second temperature higher than the first temperature.
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