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MANUFACTURING METHOD OF GROUP 13 NITRIDE CRYSTAL AND MANUFACTURING APPARATUS 发明申请

2023-02-22 2220 312K 0

专利信息

申请日期 2025-06-28 申请号 JP2013051056
公开(公告)号 JP2014177361A 公开(公告)日 2014-09-25
公开国别 JP 申请人省市代码 全国
申请人 RICOH CO LTD
简介 PROBLEM TO BE SOLVED : To provide a manufacturing method of a high quality group 13 nitride crystal. SOLUTION : A manufacturing method of a group 13 nitride crystal according to the present invention includes a crystal growing step for growing the nitride crystal on a seed crystal 30 in a mixed melt 24 containing at least one of an alkali metal and an alkali earth metal, and a group 13 metal by reacting the mixed melt 24 and nitrogen. In the crystal growing step, at least one of the mixed melt 24 and the seed crystal 30 is rotated and a relative speed of the mixed melt 24 and the seed crystal 30 in the crystal growing step is varied according to one or more predetermined patterns repeatedly and the maximum value of the relative speed shown in the patterns is 0.01 m/s or more. COPYRIGHT : (C)2014, JPO&INPIT


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