| 简介 |
A preparation method for a germanium-based schottky junction, comprising : cleaning the surface of an N-type germanium-based substrate (1); depositing a layer of CeO2 (2) on the surface thereof; and then depositing a layer of metal (3) thereon. Rare earth vapour CeO2 is in contact with a germanium substrate, so that a stable Ce-O-Ge bond can be formed at an interface, which is beneficial for reducing the interface state density, improving the quality of the interface, reducing the MIGS, and suppressing Fermi-level pinning. Meanwhile, the tunnelling resistance introduced by the CeO2 between the metal and the germanium substrate is lower than the tunnelling resistance introduced by Si3N4, Al2O3, Ge3N4 and the like. In view of the good interfacial characteristic and small conduction band offset to the germanium substrate, the insertion of a CeO2 dielectric layer is suitable for preparing the germanium-based schottky junction with low resistivity. |
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