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Thin film forming method 发明授权

2023-09-05 4090 170K 0

专利信息

申请日期 2025-07-18 申请号 JP2011530873
公开(公告)号 JP5596694B2 公开(公告)日 2014-09-24
公开国别 JP 申请人省市代码 全国
申请人 ULVAC Inc231464
简介 Within a vacuum vessel (11) in which a substrate (S) having a surface constituted of a noncrystalline magnetic film has been disposed, a target (T) having a surface (Ta) constituted of magnesium oxide is subjected to sputtering by means of a rare gas to form, on the noncrystalline magnetic film, a magnesium oxide film having a (001) orientation. This formation involves that in the noncrystalline magnetic film on which particles ejected from the target (T) have struck, an underlying magnesium oxide film is formed in a first pressure region where the noncrystallinity is maintained and that in the noncrystalline magnetic film on which particles ejected from the target (T) have struck, an overlying magnesium oxide film is formed on the underlying magnesium oxide film in a second pressure region where the noncrystallinity is not maintained.


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