| 简介 |
PROBLEM TO BE SOLVED : To provide a manufacturing method of silicon wafer which allows for enhancement of Grown-in defect reduction power, while suppressing occurrence of slip during rapid heating and rapid cooling, and also allows for improvement of the rough surface of a silicon wafer obtained after rapid heating and rapid cooling.
SOLUTION : A manufacturing method of silicon wafer includes a first heat treatment step for raising the temperature of a silicon wafer rapidly to a first temperature, between 1300°C and the melting point of silicon, in a rare gas atmosphere containing 0.01-1.00 vol.% of oxygen gas, and holding the first temperature, and a second heat treatment step for switching from the rare gas atmosphere to an oxygen-containing atmosphere containing 20-100 vol.% of oxygen gas at the first temperature, following to the first heat treatment step, and further lowering from the first temperature rapidly after holding the first temperature.
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