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REO/ALO/A1N template for III-N material growth on silicon 发明授权

2023-01-17 3690 292K 0

专利信息

申请日期 2025-07-27 申请号 US13717211
公开(公告)号 US8823055B2 公开(公告)日 2014-09-02
公开国别 US 申请人省市代码 全国
申请人 Erdem Arkun; Michael Lebby; Andrew Clark; Rytis Dargis
简介 A method of forming a template on a silicon substrate includes providing a single crystal silicon substrate. The method further includes epitaxially depositing a layer of rare earth oxide on the surface of the silicon substrate. The rare earth oxide being substantially crystal lattice matched to the surface of the silicon substrate. The method further includes forming an aluminum oxide layer on the rare earth oxide, the aluminum oxide being substantially crystal lattice matched to the surface of the rare earth oxide and epitaxially depositing a layer of aluminum nitride (AlN) on the aluminum oxide layer substantially crystal lattice matched to the surface of the aluminum oxide.


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