| 申请日期 | 2025-06-25 | 申请号 | JP2012233976 |
| 公开（公告）号 | JP5580866B2 | 公开（公告）日 | 2014-08-27 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | Hamamatsu Photonics KK236436 | ||
| 简介 | A target for ultraviolet light generation comprises a substrate adapted to transmit ultraviolet light therethrough and a light-emitting layer disposed on the substrate and generating ultraviolet light UV in response to an electron beam. The light-emitting layer includes a powdery or granular rare-earth-containing aluminum garnet crystal doped with an activator. The light-emitting layer has an ultraviolet light emission peak wavelength of 300 nm or shorter. | ||
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