| 简介 |
PROBLEM TO BE SOLVED : To provide a conductive oxide which has a lower rare metal content, and can suppress a reduction in a forming speed of a semiconductor oxide film, and to provide a semiconductor oxide film formed using the conductive oxide.
SOLUTION : A conductive oxide is a conductive oxide having a crystal phase formed from a basic structure which is the same crystal structure as that of InAlZnO4. The conductive oxide is formed from a complex oxide of indium, aluminum and bivalent metal. An atomic concentration ratio of the aluminum to the indium in the crystal phase is larger than 1 and 1.2 or less. An atomic concentration ratio of the bivalent metal to the indium in the crystal phase is larger than 1 and 1.2 or less.
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