| 简介 |
PROBLEM TO BE SOLVED : To provide a conductive oxide that may form a semiconductor oxide film containing less rare metal and having a uniform composition and the semiconductor oxide film formed using the conductive oxide.
SOLUTION : The conductive oxide is a conductive oxide having a crystal phase of a basic structure of a crystal structure similar to that of InAlZnO4. The conductive oxide consists of a complex oxide of indium, aluminum and bivalent metal. The atomic concentration ratio of aluminum to indium in the crystal phase is 0.8 or more and less than 1. The atomic concentration ratio of the bivalent metal to indium in the crystal phase is 0.8 or more and less than 1.
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