| 简介 |
PROBLEM TO BE SOLVED : To provide a mask blank which has high uniformity of the composition and optical characteristics in the plane and the film thickness direction of a phase shift film, even when a silicon based material is used in forming the phase shift film, and high uniformity of the composition and optical characteristics of phase shift films among a plurality of substrates and is low-defect.
SOLUTION : In a mask blank, a phase shift film which transmits ArF exposure light with a specified transmissivity and causes a phase shift of a specified amount in the transmitted ArF exposure light is formed on a translucent substrate. The phase shift film includes a structure in which a low-transmission layer and a high-transmission layer are laminated together. The low- and high-transmission layers are composed of a silicon- or nitrogen-based material which may contain one or more elements selected from metalloid and non-metallic elements and rare gases, and the low-transmission layer is lower in nitrogen content than the high-transmission layer.
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