| 申请日期 | 2025-08-18 | 申请号 | JP2013509826 |
| 公开（公告）号 | JPWO2012140971A1 | 公开（公告）日 | 2014-07-28 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | FUJI ELECTRIC ASSETS MAN CO LT | ||
| 简介 | Provided is a thin film that thoroughly exploits the resistance changes caused by charge and orbital ordering in a perovskite manganese oxide. One mode of the present invention provides a perovskite manganese oxide thin film 3 formed on an (m10) oriented (19 ‰¥ m ‰¥ 2) substrate 2 and containing Ba and a rare earth element (Ln) in the A sites of the perovskite crystal lattice, wherein the atomic planes are stacked in a LnO-MnO 2 -BaO-MnO 2 -LnO pattern in the [100] axis direction. | ||
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