| 申请日期 | 2026-03-13 | 申请号 | JP2013503399 |
| 公开（公告）号 | JPWO2012120893A1 | 公开（公告）日 | 2014-07-17 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | ALPS ELECTRIC CO LTD | ||
| 简介 | A method of manufacturing a nonvolatile memory device includes : forming a tantalum oxide material layer including an oxygen-deficient transition metal oxide; forming a tantalum oxide material layer including a transition metal oxide and having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the tantalum oxide material layer; and exposing, after the forming of a tantalum oxide material layer, the tantalum oxide material layer to plasma generated from a noble gas. | ||
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