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METHOD FOR PRODUCING HIGH PURITY NEODYMIUM, HIGH PURITY NEODYMIUM, SPUTTERING TARGET PRODUCED BY U 发明申请

2023-01-23 4320 1249K 0

专利信息

申请日期 2025-07-05 申请号 JP2012259236
公开(公告)号 JP2014105359A 公开(公告)日 2014-06-09
公开国别 JP 申请人省市代码 全国
申请人 JX NIPPON MINING METALS CORP
简介 PROBLEM TO BE SOLVED : To provide a high purity neodymium which has a purity excluding rare earth elements and gas components of 5 N or more, and has contents of rare earth elements and those of transition metal elements excluding Ta of 1 wt.ppm or less respectively, and to provide a technique for efficiently and stably providing the high purity neodymium, a sputtering target composed of the high purity neodymium, and a permanent magnet including the high purity neodymium as a component. SOLUTION : A neodymium crystal is obtained by putting a neodymium raw material having a purity excluding gas components of 4 N or less into a molten salt electrolytic bath, and conducting molten salt electrolysis at a bath temperature of 600-700°C. Next, the neodymium crystal is subjected to demineralization treatment, and subsequently is subjected to induction melting and/or to electron beam melting so that the neodymium crystal of a purity excluding rare earth elements and gas components of 5 N or more is obtained. COPYRIGHT : (C)2014, JPO&INPIT


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