| 申请日期 | 2025-07-07 | 申请号 | JP2010281145 |
| 公开（公告）号 | JP5502715B2 | 公开（公告）日 | 2014-05-28 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | IMEC | ||
| 简介 | The present invention is directed to rare-earth aluminate dielectric material and layer which are particularly suitable for non-volatile memory applications and in particular for integration in flash memory devices. | ||
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