| 简介 |
PROBLEM TO BE SOLVED : To provide a plasma processing method and a plasma processing device which capable of reducing variations in processing speed in the entire region in the radial direction of a substrate.
SOLUTION : A plasma processing device 10 comprises a central introduction unit 50 and a peripheral introduction unit 52. A central introduction opening 18i of the central introduction unit 50 opens toward the center of a mounting region MR of a mounting table 20 where a substrate W is placed and a gas is jetted directly under a dielectric window 18. A plurality of peripheral introduction openings 52i of the peripheral introduction unit 52 are arranged along a circumferential direction below the central introduction opening 18i and above the mounting table 20, and gas is jetted toward the edge of the mounting region MR. A plurality of first gas sources that include a reactive gas source and a rare gas source are connected to the central introduction unit 50 through a plurality of first flow rate control units. A plurality of second gas sources that include a reactive gas source and a rare gas source are connected to the peripheral introduction unit 52 through a plurality of second flow rate control units.
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