| 申请日期 | 2026-03-26 | 申请号 | US13662460 |
| 公开（公告）号 | US20140118090A1 | 公开（公告）日 | 2014-05-01 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE | ||
| 简介 | A bulk acoustic wave (BAW) resonator structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode and a second electrode disposed over the first piezoelectric layer. The piezoelectric layer is formed of a piezoelectric material doped with multiple rare earth elements for improving piezoelectric properties of the piezoelectric layer. | ||
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