| 简介 |
In a plasma processing device according to an embodiment, the energy of microwaves is introduced from an antenna through a dielectric window into a processing chamber. This plasma processing device includes a central introduction section and a peripheral introduction section. The central introduction opening of the central introduction section opens toward the center of the placement area of a placement table on which a substrate is placed and a gas is jetted through the central introduction opening immediately below the dielectric window. A plurality of peripheral introduction openings of the peripheral introduction section are arranged in a circumferential direction below the central introduction opening and above the placement table, and a gas is jetted through the peripheral introduction openings toward the edges of the placement area. A plurality of first gas sources that include a reactive-gas source and a rare-gas source are connected to the central introduction section through a plurality of first flow rate control units. A plurality of second gas sources that include a reactive-gas source and a rare-gas source are connected to the peripheral introduction section through a plurality of second flow rate control units. |
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