| 申请日期 | 2025-09-02 | 申请号 | WOJP14066990 |
| 公开（公告）号 | WO2015029569A1 | 公开（公告）日 | 2015-03-05 |
| 公开国别 | WO | 申请人省市代码 | 全国 |
| 申请人 | MURATA MANUFACTURING CO LTD | ||
| 简介 | Provided is a growth method for a large artificial crystal such that occurrence of axis misalignment is rare. The artificial crystal growth method comprises applying pressure to at least two crystal substrates, approximately solid-rectangular in shape and whereof the crystallographic axis directions are aligned, to abut the substrates in the X-axis direction, and, in the pressed state, causing the at least two crystal substrates to grow an artificial crystal. | ||
|
您还没有登录，请登录后查看下载地址
|
客服热线：
手机版
二维码
