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photo-mask corrected exposure latitude err and registration err, and registration correction method 发明申请

2023-03-06 2520 388K 0

专利信息

申请日期 2025-07-20 申请号 KR1020130098099
公开(公告)号 KR1020150021597A 公开(公告)日 2015-03-03
公开国别 KR 申请人省市代码 全国
申请人 SAMSUNG ELECTRONICS CO LTD
简介 Disclosed are a photomask and a registration correction method thereof. A photomask includes a substrate, photomask patterns on the substrate, and stress generation parts which are formed in the substrate under the photomask patterns to correct the registration error of the photomask patterns. Many stress generation parts can be arranged on the substrate of a low density region where the photomask patterns are rare in comparison with a high density region where the photomask patterns are dense, to correct an exposure latitude (EL) error according to the transmittance decrease of the substrate due to the error correction of the photomask patterns.COPYRIGHT KIPO 2015


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