| 简介 |
PROBLEM TO BE SOLVED : To provide a CMP polishing liquid which reduces polishing scratches on a surface to be polished without lowering a polishing speed and has excellent polishing selectivity between silicon oxide and silicon nitride.
SOLUTION : There is provided a CMP polishing liquid which comprises polishing material particles, one or two or more water-soluble organic compounds having at least one of a -COOH group, a -COOMX group, an -SO3H group and an -SO3MY group and water, wherein the polishing material particles are spherical and contain at least cerium, the total content of each element of cerium, lanthanum, praseodymium, neodymium, samarium and europium is 81 mol% or more with respect to the all rare earth elements contained, and the total content of each element of yttrium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and lutetium is 19 mol% or less with respect to the all rare earth elements contained.
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