| 简介 |
PROBLEM TO BE SOLVED : To provide a CMP polishing liquid which suppresses the occurrence of polishing scratches on a surface to be polished, has a high polishing speed and has excellent dispersion stability.
SOLUTION : There is provided a CMP polishing liquid which comprises abrasive grains formed by agglomeration of polishing material particles and cationic organic polymer particles via an anionic water-soluble polymer compound and water, wherein the polishing material particles are spherical and contain at least cerium, the total content of each element of cerium, lanthanum, praseodymium, neodymium, samarium and europium is 81 mol% or more with respect to the all rare earth elements contained in the polishing material particles, and the total content of each element of yttrium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and lutetium is 19 mol% or less with respect to the all rare earth elements contained in the polishing material particles.
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