| 简介 |
PROBLEM TO BE SOLVED : To provide a polishing liquid for CMP which enables the achievement of a higher polishing speed, and the achievement of a longer life of a polishing pad while suppressing a polishing flaw and dishing.
SOLUTION : A polishing liquid for CMP of the present invention is used for polishing a film to be polished and comprises : a polishing material slurry containing a polishing material, a dispersant and water; and an additive liquid containing a dispersant and water. In polishing, the polishing material slurry is mixed with the additive liquid. The polishing material includes polishing material particles. In the polishing material particles, the total content of at least one element selected from Ce, La, Pr, Nd, Sm and Eu, including at least Ce, is 81 mol% or more to the total amount of rare earth elements contained by the polishing material particles; the content of at least one element selected from Y, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu is 19 mol% or less to the total amount of the rare earth elements contained by the polishing material particles. The polishing material particles each have a spherical form.
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