| 简介 |
PROBLEM TO BE SOLVED : To suppress lowering of luminous efficiency in an optical element using a rare earth compound.
SOLUTION : A substrate including a silicon layer 103 cleaned by RCA cleaning is carried in a processing chamber of ultrahigh vacuum of about 1×10-8 Pa, for example, and cleaned by heating up to a temperature of 1000°C or more. Subsequently, it is cooled down to a growth temperature of 700°C. Thereafter, on the principal surface of the silicon layer 103, a material containing rare earth composed of an oxide of rare earth is grown epitaxially in the growth temperature of 700°C by physical vapor deposition, thus forming a light functional layer 104 of single crystal composed of a material containing rare earth.
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