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Sputtering deposition method 发明授权

2023-05-07 2350 153K 0

专利信息

申请日期 2025-08-12 申请号 JP2010074977
公开(公告)号 JP5665112B2 公开(公告)日 2015-02-04
公开国别 JP 申请人省市代码 全国
申请人 The University of Tohoku University504157024; Sumitomo Osaka Cement Co Ltd183266
简介 PROBLEM TO BE SOLVED : To provide a method for forming a film with a sputtering process, which can further improve the crystallinity of an LaBfilm, and also does not cause the peeling of the LaBfilm.SOLUTION : The LaBfilm having superior crystallinity can be obtained by an operation of sputtering an LaBtarget in such an atmosphere that 0.01-5 vol.% of nitrogen gas is added to argon, when the LaBfilm is formed on a substrate formed from tungsten or molybdenum and a material containing an oxide of a rare-earth element, with the sputtering process.


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