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Magneto-resistance effect element, magnetic memory and magnetic resistance effect element manufactu 发明授权

2023-08-04 1860 469K 0

专利信息

申请日期 2025-07-11 申请号 JP2011206386
公开(公告)号 JP5665707B2 公开(公告)日 2015-02-04
公开国别 JP 申请人省市代码 全国
申请人 TOSHIBA CORPORATION3078
简介 According to one embodiment, a magnetoresistive effect element includes a first magnetic film having magnetic anisotropy and an invariable magnetization direction in a direction perpendicular to a film plane, a second magnetic film having magnetic anisotropy and a variable magnetization direction in the direction perpendicular to the film plane, and a nonmagnetic film between the first magnetic film and the second magnetic film. At least one of the first and second magnetic films includes a first magnetic layer. The first magnetic layer includes a rare earth metal, a transition metal, and boron.


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