| 申请日期 | 2026-01-14 | 申请号 | KR1020140094252 |
| 公开（公告）号 | KR1020150013065A | 公开（公告）日 | 2015-02-04 |
| 公开国别 | KR | 申请人省市代码 | 全国 |
| 申请人 | IMEC; KATHOLIEKE UNIVERSITEIT LEUVEN | ||
| 简介 | The present invention relates to a semiconductor structure, and a method of manufacturing the same, including (i) a substrate with III-V material, and (ii) an interface layer having high-k stacked on the substrate. The interface layer includes a rare-earth aluminate and an n-type FET device. | ||
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