| 申请日期 | 2026-04-23 | 申请号 | US14341629 |
| 公开（公告）号 | US20150028428A1 | 公开（公告）日 | 2015-01-29 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | IMEC VZW; Katholieke Universiteit Leuven KU LEUVEN R D | ||
| 简介 | A semiconductor structure comprises a substrate including a III-V material, and a high-k interfacial layer overlaying the substrate. The interfacial layer includes a rare earth aluminate. The present disclosure also relates to an n-type FET device comprising the same, and a method for manufacturing the same. | ||
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