| 简介 |
A p-type semiconductor layer containing a solid solution of NiO and ZnO as a principal component is joined to an n-type semiconductor layer containing ZnO as a principal component, and the p-type semiconductor layer contains a rare earth element R. The content of the rare earth element R is preferably 0.001 to 1 mole with respect to 100 moles of the principal component. Further, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm and Yb can be used as the rare earth element, for example. An internal electrode 4 is preferably principally composed of a composite oxide containing the rare earth element R and Ni. Thereby, photoelectric conversion efficiency can be improved, and ultraviolet light can be directly detected as a photocurrent without externally disposing a power source circuit. |
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