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ZnO deposition material and its manufacturing method 发明授权

2023-12-19 2820 64K 0

专利信息

申请日期 2025-06-26 申请号 JP2008274987
公开(公告)号 JP5376116B2 公开(公告)日 2013-12-25
公开国别 JP 申请人省市代码 全国
申请人 Mitsubishi Materials Corp6264
简介 PROBLEM TO BE SOLVED : To provide a vapor deposition material of ZnO, which has high sintered density, hardly causes abnormal electrical discharge even when high voltage has been applied, and is suitable as a vapor deposition material for use in forming a vapor deposition film in a wide range, and to provide a manufacturing method therefor. SOLUTION : The vapor deposition material of ZnO is formed of a pellet of a sintered compact which contains ZnO as a main component and an oxide of a rare-earth element, and has a relative density of 97.5% or more. The content of the oxide of the rare-earth element is preferably 0.05 to 10 mass%. The vapor deposition material of ZnO is formed by mixing a ZnO powder of which the average particle size of a primary particle is 0.1 to 5.0 μm, with an oxide powder of the rare earth element, of which the average particle size of the primary particle is 1/5 to 1/2 of the average particle size of the ZnO powder, so that the content of the oxide of the rare-earth element can be in the above range, then adding a binder to the mixture, press-forming it, demolding it, and baking it at 1, 000°C or higher. The manufacturing method therefor is also disclosed. COPYRIGHT : (C)2009, JPO&INPIT


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