客服热线:18202992950

Band gap tuning in transition metal oxides by site-specific substitution 发明授权

2023-12-10 1690 1460K 0

专利信息

申请日期 2025-08-20 申请号 US13401100
公开(公告)号 US8613798B2 公开(公告)日 2013-12-24
公开国别 US 申请人省市代码 全国
申请人 Ho Nyung Lee; Matthew F Chisholm Jr; Gerald Earle Jellison Jr; David J Singh; Woo Seok Choi
简介 A transition metal oxide insulator composition having a tuned band gap includes a transition metal oxide having a perovskite or a perovskite-like crystalline structure. The transition metal oxide includes at least one first element selected from the group of Bi, Ca, Ba, Sr, Li, Na, Mg, K, Pb, and Pr; and at least one second element selected from the group of Ti, Al, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Nb, Mo, Ru, Rh, Pd, Hf, Ta, W, Re, Os, Ir, and Pt. At least one correlated insulator is integrated into the crystalline structure, including REMO3, wherein RE is at least one Rare Earth element, and wherein M is at least one element selected from the group of Co, V, Cr, Ni, Mn, and Fe. The composition is characterized by a band gap of less than 4.5 eV.


您还没有登录,请登录后查看下载地址


反对 0举报 0 收藏 0 打赏 0评论 0
下载排行
网站首页  |  关于我们  |  联系方式  |  使用协议  |  版权隐私  |  网站地图  |  排名推广  |  广告服务  |  积分换礼  |  网站留言  |  RSS订阅  |  违规举报  |  京ICP备2021025988号-4