| 简介 |
PROBLEM TO BE SOLVED : To provide a method for manufacturing a SiC single crystal, capable of suppressing the contamination of a polycrystal to grow the SiC single crystal.
SOLUTION : The method for manufacturing a SiC single crystal includes contacting a SiC seed crystal substrate to a Si-C solution arranged in a graphite crucible and having a temperature gradient dropped to the surface from the inside to grow the SiC single crystal. The Si-C solution includes a solvent constituent element including Si and a rare earth element having a melting point lower than that of Si; the rare earth element is at least one kind selected from a group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy and Yb; the total amount of the rare earth element is 0.5-13.7 at% on the basis of the total amount of the solvent constituent element; and the rare earth element is melted after melting the Si to form the solvent of the Si-C solution.
SELECTED DRAWING : Figure 16
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