| 申请日期 | 2025-07-08 | 申请号 | JP2008303493 |
| 公开（公告）号 | JP5365165B2 | 公开（公告）日 | 2013-12-11 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | Shin Etsu Chemical Co Ltd2060 | ||
| 简介 | A wafer has a rare earth fluoride coating disposed, typically sprayed on a substrate as an outermost layer, the rare earth fluoride being selected from lanthanoid fluorides, yttrium fluoride, and scandium fluoride. It is useful as a dummy wafer in a plasma etching or deposition system. | ||
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