| 简介 |
PROBLEM TO BE SOLVED : To improve productivity and performance of a CMISFET including a high-dielectric gate insulation film and metal gate electrodes. SOLUTION : A semiconductor device manufacturing method comprises : forming a Hf-containing insulation film 5 for a gate insulation film on a principal surface of a semiconductor substrate 1; forming a metal nitride film 7 on the insulation film 5; selectively removing the metal nitride film 7 in an nMIS formation region 1A which is a scheduled formation region of an n-channel MISFET by wet etching using a photoresist pattern on the metal nitride film 7 as a mask; and subsequently forming a rare earth metal element-containing threshold value adjustment layer 8 and performing heat treatment to react the Hf-containing insulation film 5 in the nMIS formation region 1A with the threshold value adjustment layer 8. However, the Hf-containing insulation film 5 in a pMIS formation region 1B which is a scheduled formation region of a p-channel MISFET does not react with the threshold value adjustment layer 8 because there exists the metal nitride film 7. The semiconductor device manufacturing method comprises : subsequently, forming metal gate electrodes in the nMIS formation region 1A and the pMIS formation region 1B after removing the unreacted threshold value adjustment layer 8 and the metal nitride film 7. COPYRIGHT : (C)2014, JPO&INPIT |
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