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A manufacturing method of a superconductor thin 发明授权

2022-12-24 3360 95K 0

专利信息

申请日期 2025-06-29 申请号 JP2010171840
公开(公告)号 JP5345983B2 公开(公告)日 2013-11-20
公开国别 JP 申请人省市代码 全国
申请人 NTT4226
简介 PROBLEM TO BE SOLVED : To allow formation of a single crystal film having a larger area, the film being a single crystal film of a copper oxide high-temperature superconductor RECuO(RE is a rare earth element) having a minimum number of constitutive elements whose film thickness is accurately controlled.SOLUTION : A precursor thin film 102 containing a rare earth element RE, copper, and oxygen is formed by vapor deposition on a single crystal substrate 101 which is composed of a single crystal in which at least one of the in-plane lattice constant and the interplanar lattice constant is in agreement with those of the compound RECuOwhich is the object of formation within the range of ±1%. The composition ratio of the rare earth element RE to copper in the precursor thin film 102 formed is made to stoichiometry of the chemical formula RECuOby controlling the feed rate of the rare earth element RE and copper in vapor deposition. Then, the composition of oxygen is also made to agree with stoichiometry by solid phase epitaxy in a high temperature and low oxygen partial pressure atmosphere and low-temperature reduction to produce a single crystal thin film having superconductivity.


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