| 申请日期 | 2026-03-11 | 申请号 | JP2013036757 |
| 公开（公告）号 | JP2013219330A | 公开（公告）日 | 2013-10-24 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | NATIONAL INSTITUTE FOR MATERIALS SCIENCE | ||
| 简介 | PROBLEM TO BE SOLVED : To provide a thermoelectric semiconductor which can be used in a high-temperature region and which exhibits thermoelectric characteristics of both n-type and p-type by change of a composition ratio.
SOLUTION : A thermoelectric semiconductor uses a rare-earth aluminoboride YaAlxB14 (where 0.49 | ||
|
您还没有登录，请登录后查看下载地址
|
客服热线：
手机版
二维码
