| 简介 |
PROBLEM TO BE SOLVED : To provide a method of producing an SiC single crystal, the method stably producing a 4H-SiC single crystal. SOLUTION : In the method of producing the SiC single crystal, a solution-growth technique is used. The method of producing the SiC single crystal includes : preparing a container 4 inside which a material 5 is housed, wherein the material has Si and a rare-earth element and has a rare-earth element content of ≥60 at% based on the total content of Si and rare-earth element; producing a melt by melting the material 5 and dissolving C in the melt to produce an SiC solution; immersing a seed crystal 7 comprising a single crystal in the SiC solution; and making the temperature of the SiC solution in the vicinity of the single crystal, lower than that other than in the vicinity thereof, thereby growing the 4H-SiC single crystal on the seed crystal 7. COPYRIGHT : (C)2012, JPO&INPIT |
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