| 简介 |
PURPOSE : A polycrystalline silicon ingot and a manufacturing method thereof are provided to evaluate the maximum surrounding deformation of the polycrystalline silicon ingot, thereby suppressing the generation of defects due to the processing.CONSTITUTION : A method for manufacturing a polycrystalline silicon ingot comprises the steps of : measuring the maximum surrounding deformation of a polycrystalline silicon ingot previously manufactured (S12); setting up the heat treatment conditions of the heat treatment process and the re-heat treatment process within a crucible so that the maximum surrounding deformation is less than a predetermined value (S13); manufacturing the polycrystalline silicon ingot by coagulating silicon melt within the crucible in one direction (S21); treating the polycrystalline silicon ingot by heating within the crucible (S22); and taking the polycrystalline silicon ingot out of the crucible and re-treating the polycrystalline silicon ingot by heating (S23).[Reference numerals] (AA) Starting ingot; (BB) No; (CC) Below a certain maximum surrounding deformation value; (DD) Yes; (EE) Polycrystalline silicon ingot; (S11) Starting process; (S12) Maximum surrounding deformation evaluation process; (S13) Heat treatment condition setting process; (S21) Manufacturing process; (S22) Crucible-inside heating process; (S23) Re-heating processCOPYRIGHT KIPO 2013 |
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