| 简介 |
PROBLEM TO BE SOLVED : To efficiently remove impurities remaining at the end of chemical vapor deposition process of a metal film for a lower layer to allow formation of the subsequent metal film for an upper layer by chemical vapor deposition, or to form the subsequent metal film for the upper layer as a metal film which is excellent in adhesion, is uniform and smooth and has excellent step coverage by the chemical vapor deposition, in a film forming method of a metallic multilayer film.
SOLUTION : A film forming method of a metallic multilayer film for forming a multilayer film having a laminate structure of two or more layers of different metal films by chemical vapor deposition includes : a first metal film forming step of forming a first metal film by the chemical vapor deposition in a vacuum state; a plasma irradiation step of irradiating the first metal film with plasma containing a noble gas while maintaining the vacuum state after the first metal film forming step; and a second metal film forming step of forming a second metal film on the first metal film by the chemical vapor deposition after the plasma irradiation step.
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