客服热线:18202992950

MANGANESE OXIDE THIN FILM AND OXIDE LAMINATE 发明申请

2023-09-05 4630 483K 0

专利信息

申请日期 2026-03-03 申请号 WOJP12081763
公开(公告)号 WO2013140677A1 公开(公告)日 2013-09-26
公开国别 WO 申请人省市代码 全国
申请人 FUJI ELECTRIC CO LTD
简介 Provided is a thin film or a laminate, which undergoes phase transition through mott transition at room temperature to exhibit a switching function. In one embodiment of the present invention, a perovskite-type manganese oxide thin film (2) formed on a surface of a substrate (1) having a (110) plane orientation or a (210) plane orientation is provided. The manganese oxide thin film has a compositional formula Ln1-xAexMnO3 (wherein Ln represents at least one trivalent rare earth element selected from lanthanoid elements; and Ae represents at least one alkali earth element selected from the group consisting of Ca, Sr and Ba), wherein 0 < x ≤ 1/18 in the compositional formula.


您还没有登录,请登录后查看下载地址


反对 0举报 0 收藏 0 打赏 0评论 0
下载排行
网站首页  |  关于我们  |  联系方式  |  使用协议  |  版权隐私  |  网站地图  |  排名推广  |  广告服务  |  积分换礼  |  网站留言  |  RSS订阅  |  违规举报  |  京ICP备2021025988号-4