| 简介 |
The present invention relates to a method for manufacturing an oxide thin film and a technical point of the present invention is to provide a method for manufacturing a p-type oxide thin film, in which an oxide thin film is doped with a p-type dopant to form a p-type oxide thin film, wherein the p-type dopant is a rare earth element. Another technical point of the present invention is to provide a method for forming an oxide thin film on a substrate, which comprises the steps of : preparing a source solution containing a rare earth element and an oxide thin film material; inputting the source solution into the reaction chamber in a droplet state by transmitting ultrasonic waves to the source solution; and supplying the reaction product pyrolyzed in the reaction chamber onto the substrate. Thus, according to the present invention, a doping method of a p-type oxide thin film is proposed, and the rare earth element is used as the p type dopant to propose a new dopant for the proposed method, thereby providing the p-type oxide thin film capable of controlling electrical, optical and structural characteristics.(AA) Reaction chamber(BB) Substrate(CC) Substrate holderCOPYRIGHT KIPO 2019 |
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