| 简介 |
PROBLEM TO BE SOLVED : To provide a sapphire single crystal growth apparatus capable of preventing impurities from mixing into a sapphire single crystal grown by the Czochralski method, and capable of suppressing the generation of bubbles or the like in the sapphire single crystal.
SOLUTION : A gas supply means 60 makes a noble gas to flow along a shaft 12a from a lower side opening 17A of a heat insulation member 17, toward a gap of a crucible 10 and the heat insulation member 17, thereby forming a flow of the noble gas passing an upper side opening 17B and flowing out from the gap after the gas flows through the side of the crucible 10 from the side of the shaft 12a.
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