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SILICON LIGHT-EMITTING ELEMENT AND PROCESS OF MANUFACTURING THE SAME 发明申请

2023-06-07 3160 72K 0

专利信息

申请日期 2025-08-16 申请号 JP2012026964
公开(公告)号 JP2013165146A 公开(公告)日 2013-08-22
公开国别 JP 申请人省市代码 全国
申请人 NIPPON TELEGRAPH TELEPHONE
简介 PROBLEM TO BE SOLVED : To provide a silicon light emitting element added with a rare earth element such as erbium that emits light in a communication wavelength band and oxygen, in which light-emitting efficiency is further enhanced.SOLUTION : In a silicon light emitting element, a first silicon layer 101 and a second silicon layer 102 are bonded, and an active layer 104 is formed at an interface 103 between the first silicon layer 101 and the second silicon layer 102 by doping a rare earth element and oxygen into the interface 103. For instance, the rare earth element and oxygen are doped using an ion implantation technique. The rare earth element is acceptable if it is erbium.


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