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MANGANESE OXIDE THIN FILM LAMINATE AND OXIDE LAMINATE 发明申请

2023-11-01 4130 1828K 0

专利信息

申请日期 2025-06-25 申请号 WOJP12081762
公开(公告)号 WO2013121661A1 公开(公告)日 2013-08-22
公开国别 WO 申请人省市代码 全国
申请人 FUJI ELECTRIC CO LTD
简介 Provided are a thin film or a laminate which undergoes phase transitions through a Mott transition at room temperature to achieve a switching function. Provided is a manganese oxide thin film laminate formed on the surface of a substrate (1) and provided with a first manganese oxide thin film (20) and a second manganese oxide thin film (21) which are in contact with each other. In the material of the first manganese oxide thin film, the cubic root of the unit cell volume in the bulk is greater than the lattice constants of the substrate, but is smaller in the material of the second manganese oxide thin film. The materials of the first and second manganese oxide thin films have the compositional formulae RMnO3 and LMnO3, respectively (wherein R and L are each at least one mutually different trivalent rare earth element selected from lanthanoids). In both manganese oxide thin films, both the R(L) and the Mn form the same atomic layer parallel to the substrate surface.


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