| 简介 |
The present invention provides an Ag alloy film which exhibits a low-level electrical resistivity nearly equivalent to that of a pure Ag film and which is superior to a conventional Ag alloy film in durability (specifically, resistances to salt water and halogen) and in the adhesion to a substrate. Further, the film formation rate in forming this Ag alloy film by sputtering is as high as that in forming a pure Ag film by sputtering. The present invention is an Ag alloy film useful as a reflecting film and/or a transmitting film or as an electrical wiring and/or an electrode, said Ag alloy film containing 0.1 to 1.5 at% of at least one element selected from the group consisting of Pd, Au and Pt and 0.02 to 1.5 at% of at least one element selected from the group consisting of at least one rare earth element, Bi and Zn with the balance being Ag and unavoidable impurities. |
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