| 简介 |
A resistance memory element includes an elementary body and opposing electrodes separated by at least a portion of the elementary body. The elementary body is preferably made of a strontium titanate-based semiconductor ceramic expressed by the formula : (Sr1-xAx)v(Ti1-yBy)wO3 (where A represents at least one element selected from the group consisting of Y and rare earth elements, and B represents at least one of Nb and Ta), and satisfies the relationships 0.001<=x+y<=0.02 (where 0<=x<=0.02 and 0<=y<=0.02) and 0.87<=v/W<=1.030. This semiconductor ceramic changes the switching voltage depending on, for example, the number of grain boundaries in the portion between the opposing electrodes. |
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