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METHOD FOR PRODUCING RARE EARTH HYDRIDE, HYDROGEN SENSOR AND THIN FILM TRANSISTOR 发明申请

2023-09-20 1200 354K 0

专利信息

申请日期 2025-07-09 申请号 JP2017220273
公开(公告)号 JP2019089267A 公开(公告)日 2019-06-13
公开国别 JP 申请人省市代码 全国
申请人 KAKE EDUCATIONAL INSTITUTE; SAITAMA UNIV; TOYO UNIV
简介 PROBLEM TO BE SOLVED : To provide a method for producing a rare earth hydride that can generate a rare earth hydride semiconductor even in an atmosphere at low temperature (particularly, room temperature) and low concentration hydrogen. SOLUTION : In a method for producing a rare earth hydride, a laminate film with a platinum film formed on a rare earth element film is heat-treated in an atmosphere containing hydrogen; a rare earth element in the film is hydrogenated, and it turns into a film with rare earth hydride generated therein. SELECTED DRAWING : None COPYRIGHT : (C)2019, JPO&INPIT


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